The defense community in Maryland is an R&D powerhouse. Use this database to see the innovative patents that are poised for commercialization.Data is provided by DoD Naval labs in Southern Maryland. Database funding supported by the DoD Office of Economic Adjustment through a Defense Industry Adjustment grant program.
|Abstract||An inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising a gallium-polar III-Nitride barrier material, a second material layer, a two-dimensional hole gas in the second layer, and wherein the gallium-polar material comprises one or more III-Nitride epitaxial material layers grown such that when GaN is epitaxially grown the top surface of the epitaxial layer is gallium-polar. A method of making an inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising selecting a face or offcut orientation of a substrate so that the gallium-polar (0001) face is the dominant face, growing a nucleation layer, growing a gallium-polar epitaxial layer, doping the epitaxial layer, growing a barrier layer, etching the GaN, forming contacts, performing device isolation, defining a gate opening, depositing and defining gate metal, making a contact window, depositing and defining a thick metal.|
|Patent Number||9,196,614||Issue Date||2015-11-24||Link USPTO website|
This patent was granted in 288 days, which is a much slower than average speed.
It has 15 claims, which is fewer than average for this category.
Its proximity to basic research is much less than others in this category, and it displays a slower than average technology cycle time.
This patent received far fewer citations from other patents, and references far fewer other patents, as compared to other patents in this category.
This patent had a much slower than average grant time compared to others in this category.
Patent grant time can be influenced by many factors. Activities within the USPTO that are beyond the control of patent attornies can influence grant time, but short grant times can also indicate well-written patents and dedicated efforts to respond rapidly to USPTO office actions with strong arguments. Shorter grant times are preferable, and the scores for this section are inverse measures — higher scores are better.
This patent has fewer claims compared to others in this category.
The number of claims in a patent is correlated with its strength. Because greater claim counts increase the cost of a patent, more claims can indicate the importance an applicant assigns to a patent. Importantly, some may elect to file claims across multiple patents. A higher score in this metric indicates more claims, relative to others in this category.
This patent has received far fewer citations from other patents, than others in this category.
Citations from other patents are an important measure of the significance of a patent. More citations indicate that other technologies build on a patent. Higher scores in this metric are better, and indicate more citations from other patents.
This patent referenced many more citations to other patents, than others in this category.
A lower number of citations to other patents can be a sign of diminished patent strength. More citations indicate dependence on more other technologies. Higher scores in this category are better, and indicate fewer citations to other patents.
This patent has much less proximity to basic research compared to others in this category.
Proximity to basic research is measured by comparing the number of citations to non-patent literature among a cohort of patents. Because most non-patent citations are primary research papers, a higher count indicates greater proximity to basic research.